English

DTIC AD0730774: Silicon RF Power Transistor Metallization

The effects of high temperatures and high current densities on the physical properties of aluminum metallization on semiconductor devices were studied. In particular, this research was concerned with three possible failure modes of the metallization; electromigration, interdiffusion of silicon and aluminum, and metallization reconstruction due to thermal cycling. Electromigration theories are discussed and an engineering curve predicting MTF for an Al-2% Cu alloy was obtained.

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