English

DTIC ADA131749: Silicide Formation and Schottky Barrier of Rare-Earth Metals on SI

During this period, our activities included the following: The arrival of the General Ionex Tandetron accelerator. We are now setting this machine up for backscattering experiments. We expect to be on-line in a few months. Perfecting of the technique of fabricating pit-free ErSi2 diodes. Measurement barrier heights of Er and ErSi2 on p and n type Si. For p-type Si the measurements were done at room temperature. For n-type Si, the measurements were done at 77 degrees K. Presentation of an invited paper entitled Ion Mixing and Phase Diagrams at the international conference on Ion Beam Modification of Materials, Grenoble, France, August 1982 (see Appendix A). This paper was written in collaboration with Caltech (B. X. Liu and M-A. Nicolet). Presentation of a paper entitled Surface Morphology and Electronic Properties of Erbium Silicide at the annual MRS meeting held in Boston, November 1982 (see Appendix B).

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