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DTIC ADP013777: SiGe(C) Epitaxial Technologies - Issues and Prospectives

Epitaxial layers of Silicon Germanium Carbides, SiGe(C), have entered mainstream Silicon processing, forming base regions in heterojunction bipolar transistors. There also are exciting prospects for SiGe(C) having an impact on MOS technologies. In both cases heteroepitaxial layers enable very significant performance enhancements at the device and circuit level. A related area and a familiar hot issue is silicon epitaxy for device active regions in MOS technologies where tightly controlled doping distributions can be incorporated to facilitate device function at deep submicron channel lengths. CVD is a preferred epitaxy deposition technique for production; currently LP-CVD and UHV-CVD dominate. Each of these techniques demand much of the technology and have their respective strengths and weaknesses. Issues regarding matrix and doping control, uniformity, blanket and selective area growth, and throughput (a sensitive area) will be addressed. Also in the CVD portfolio is LEPE-CVD, a recent contender for the production arena that has the ability to access very high deposition rates. Such rates are required in depositing relaxed buffer layer material required as virtual substrates' for

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